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| geometry process details principal device types mpsa05 mpsa06 gross die per 4 inch wafer 22,400 process CP304 small signal transistor npn - high current transistor chip process epitaxial planar die size 22 x 22 mils die thickness 9.0 mils base bonding pad area 5.7 x 3.9 mils emitter bonding pad area 5.3 x 3.9 mils top side metalization al - 30,000? back side metalization au - 18,000? www.centralsemi.com r4 (22-march 2010)
process CP304 typical electrical characteristics www.centralsemi.com r4 (22-march 2010) |
Price & Availability of CP304
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